Researchers at Indian Institute of Technology, Roorkee (IIT-R) have made a major breakthrough in memory device technology, which will create a wave of technological revolution. A team of researchers from IIT Roorkee’s Department of Physics and Centre for Nano Technology has developed Magnetoelectric Random Access Memory (MeRAM), an energy efficient, high density and four-logic state memory device.
The new device will bring a magnificent change in the overall computing process. MeRAM will also bring a massive change in memory –intensive tasks like machine learning, artificial intelligence, virtual reality, pattern recognition, video and multimedia signal processing. MeRAM has a wide potential to be utilised in future memory chips for all electronic applications, including microprocessors, computers, tablets, smartphones and for large data storage.
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MeRAM was constructed and developed in the Functional Nanomaterials Research Laboratory through magnetron sputtering technique.
The significant advantage of MeRAM is a combination of extraordinary low energy with high density, high-speed writing and reading times. The device will also facilitate non-volatility, the capability to retain data without power application.
The world is developing at a rapid pace, quantum and smaller technologies, which has stimulated an increasing demand for small and more efficient devices and technology. The major focus of researchers was to achieve a four-logic state. In all, the new technology, i.e., MeRAM will bring a new wave in the technological revolution.
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A researcher associated with the research pointed that the success of the project depends on a new material called ‘FSMA (Ferromagnetic Shape Memory Alloys)’. The ultimate memory cell has shown a significant improvement of nearly 140% in the memory functions, she added.