IIT Roorkee Researchers Develop Magnetoelectric Random Access Memory

Sakunth Kumar

Updated On: November 16, 2017 03:30 pm IST

  • IIT Roorkee Researchers Develop Magnetoelectric RAM. The device was constructed in the Functional Nanomaterials Research Laboratory using magnetron sputtering technique. 
IIT Roorkee Researchers Develop Magnetoelectric Random Access Memory

Researchers at Indian Institute of Technology, Roorkee (IIT-R) have made a major breakthrough in memory device technology, which will create a wave of technological revolution. A team of researchers from IIT Roorkee’s Department of Physics and Centre for Nano Technology has developed Magnetoelectric Random Access Memory (MeRAM), an energy efficient, high density and four-logic state memory device.

The new device will bring a magnificent change in the overall computing process. MeRAM will also bring a massive change in memory –intensive tasks like machine learning, artificial intelligence, virtual reality, pattern recognition, video and multimedia signal processing. MeRAM has a wide potential to be utilised in future memory chips for all electronic applications, including microprocessors, computers, tablets, smartphones and for large data storage.

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MeRAM was constructed and developed in the Functional Nanomaterials Research Laboratory through magnetron sputtering technique.

The significant advantage of MeRAM is a combination of extraordinary low energy with high density, high-speed writing and reading times. The device will also facilitate non-volatility, the capability to retain data without power application.

The world is developing at a rapid pace, quantum and smaller technologies, which has stimulated an increasing demand for small and more efficient devices and technology. The major focus of researchers was to achieve a four-logic state. In all, the new technology, i.e., MeRAM will bring a new wave in the technological revolution.

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A researcher associated with the research pointed that the success of the project depends on a new material called ‘FSMA (Ferromagnetic Shape Memory Alloys)’. The ultimate memory cell has shown a significant improvement of nearly 140% in the memory functions, she added.

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