# GATE 2024 ECE Daily Practice Questions for 30 August 2023

Here are GATE 2024 ECE Daily Practice Questions for 30 August 2023. Solve these questions and enhance your Electronics and Communication Engineering preparation!
GATE 2024 ECE Daily Practice Questions for 30 August 2023

GATE 2024 ECE Daily Practice Questions for 30 August 2023: The GATE 2024 exam is set to take place on February 3, 4, 10, and 11. Despite the exam being a few months away, it has a vast syllabus that necessitates early preparation. Hence, candidates should start their preparation today. Presented here are daily practice questions for GATE 2024 electronics and communication engineering. Practice the five questions provided below from previous years to enhance your exam preparation.

## GATE 2024 ECE Daily Practice Questions for 30 August 2023

Find GATE 2024 daily practice questions for Electronics and Communication Engineering here. Solve them to analyze your exam preparation.

Question 1: A 100 cm × 32 cm rectangular sheet is folded 5 times. Each time the sheet is folded, the long Edge aligns with its opposite side. Eventually, the folded sheet is a rectangle of dimension 100 cm × 1 cm. The total number of creases visible when the sheet is unfolded is
(a) 32
(b) 63
(c) 31
(d) 5

Question 2: Which one of the following functions is analytic over the entire complex plane?
(a) ln(z)
(b) e ^ (1 / z)
(c) 1/(1 - z)
(d) cos(z)

Question 3: In a semiconductor, if fermi energy level lies in the conduction band, then the semiconductor is known as.
(a) Degenerative n-type
(b) Non-degenerate n-type
(c) Degenerative p-type
(d) Non-degenerate n-type

Question 4: A linear Hamming code is used to map 4-bit messages to 7-bit codewords. The encoder mapping is linear. If the message 0001 is mapped to the codeword 0000111, and the message 0011 is mapped to the codeword 1100110, then the message 0010 is mapped to
(a) 0010011
(b) 1100001
(c) 1111000
(d) 1111111

Question 5: A single crystal intrinsic semiconductor is at a temperature of 300 K with an effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from the mid-bandgap energy level by
(a) 18.02 meV.
(b) 9.01 meV.
(c) 13.45 meV.
(d) 26.90 meV.

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